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Digital VLSI Design Virtual lab
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MOSFET
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MOSFET
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Theory
Self evaluation
Procedure
Simulator
Assignment
Reference
Feedback
Video
1)
The drain current of a MOSFET is directly proportional to the Vgs applied only when the device is biased in
Saturation region
Triode region
Cut-off region
None of the above
2)
Which of the following statement is TRUE concerning the threshold voltage (Vt) of a MOSFET?
Vt increases when reverse body bias increases
Vt decreases when reverse body bias increases
Channel in pMOS transistor is formed when the gate voltage is higher than Vt
Channel in nMOS transistor is formed when the gate voltage is lower than Vt
3)
An nMOS transistor in 180nm technology has Vdd=1.8V, Vtn=0.5V, Vgs=3V. The transistor is in saturation when
Vds=0
Vds is lower than 2.5V
Vds is greater than 2.5V
Independent of Vds
4)
Which of the following describes the construction of a MOSFET?
The gate is formed by a reverse-biased junction
The gate is separated from the channel with a thin insulating layer
The source is separated from the drain by a thin insulating later
The source is formed by depositing metal on silicon
5)
Which of the following is NOT TRUE in saturation mode of operation in a long channel MOSFET?
The effective channel length of the device decreases with increase in Vds
Depletion width at the drain junction increases with Vds
Threshold voltage varies with increase in Vds
Square dependency of drain current with respect to Vgs
Cite this Simulator:
vlab.amrita.edu,. (2011). MOSFET. Retrieved 21 January 2025, from vlab.amrita.edu/?sub=59&brch=165&sim=270&cnt=1685
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